PC3H711NIP0F datasheet

Маркировка

PC3H711NIP0F
Производитель

Sharp Microelectronics
Описание

Sharp Microelectronics PC3H711NIP0F Configuration: 1 Current - Dc Forward (if): 10mA Current - Output / Channel: 50mA Current Transfer Ratio: 700 % Current Transfer Ratio (max): 700% @ 500?µA Current Transfer Ratio (min): 100% @ 500?µA Forward Current: 0.5 mA Input Type: DC Isolation Voltage: 2500 Vrms Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Collector Current: 50 mA Maximum Collector Emitter Saturation Voltage: 200 mV Maximum Collector Emitter Voltage: 80 V Maximum Fall Time: 18 us Maximum Forward Diode Voltage: 1.4 V Maximum Input Diode Current: 10 mA Maximum Operating Temperature: + 100 C Maximum Power Dissipation: 170 mW Maximum Reverse Diode Voltage: 6 V Maximum Rise Time: 18 us Minimum Operating Temperature: - 30 C Mounting Type: Surface Mount Number Of Channels: 1 Output Device: Transistor Output Type: Transistor Package / Case: 4-SMD Series: - Vce Saturation (max): 200mV Voltage - Isolation: 2500Vrms Voltage - Output: 80V Other Names: 425-2109-2
Количество страниц

13 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

129,64 KB